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Teoria Electromagnetica Hayt 5 Edicion Espaol





teoria electromagnetica hayt 5 edicion espaol









teoria electromagnetica hayt 5 edicion espaol


edicion espaola hayt 5 espanol hayt 5 teoria electromagnetica hayt 5 español edicion hayt 5 espanol hayt 5 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same. More particularly, the invention relates to a semiconductor device having an electrical circuit and a mechanical part and a method for manufacturing the same. 2. Description of the Related Art A semiconductor device such as a DRAM, an SRAM, or the like, has a plurality of electrical circuits such as a memory cell, a fuse, a chip enable, and the like. For example, in the case of a DRAM, a plurality of row decoders and a plurality of column decoders are arranged, and each of the row decoders is connected to the associated one of a plurality of word lines. In addition, the respective column decoders are connected to a plurality of bit lines arranged in the form of a matrix. In this way, in the DRAM, each of the word lines is connected to each of the row decoders, and each of the bit lines is connected to each of the column decoders, thereby forming a large number of electrical circuits. With recent demand for higher integration of a semiconductor device, the minimum line width of an electrical circuit has become smaller. This results in an increase in a contact resistance, thereby causing a decline in device performance. Accordingly, it is desirable that the contact resistance be decreased to a certain degree in order to avoid a decline in device performance. In addition, in the case of a DRAM, in order to prevent a drop in the charge stored in a memory cell due to a leak current from the memory cell, a contact resistance for storing a signal is reduced. Here, to reduce the contact resistance, a silicide is formed at an interface between the contact and a diffusion layer. This is a method for reducing the contact resistance by forming silicide at the interface between the contact and the diffusion layer. Further, the following method is known as a method for reducing the contact resistance. That is, a self-aligned contact (SAC) structure is employed as a contact structure for reducing the contact resistance. The SAC structure is constituted by a polysilicon plug formed in a contact hole, an insulating film formed on the surface of the polysilicon plug









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Teoria Electromagnetica Hayt 5 Edicion Espaol

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